Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Päritoluriik
China
Toote üksikasjad
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 102,50
€ 4,10 tk (torus 25) (ilma käibemaksuta)
€ 125,05
€ 5,002 tk (torus 25) (koos käibemaksuga)
25
€ 102,50
€ 4,10 tk (torus 25) (ilma käibemaksuta)
€ 125,05
€ 5,002 tk (torus 25) (koos käibemaksuga)
25
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Tuub |
---|---|---|
25 - 25 | € 4,10 | € 102,50 |
50 - 100 | € 3,90 | € 97,50 |
125+ | € 3,50 | € 87,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
8A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
4.3V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
160ns
Peak Non-Repetitive Forward Surge Current
130A
Päritoluriik
China
Toote üksikasjad
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.