Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Number of Elements per Chip
1
Width
53mm
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Transistor Material
SiC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Height
15.75mm
Päritoluriik
United States
€ 1 160,00
€ 1 160,00 tk (ilma käibemaksuta)
€ 1 415,20
€ 1 415,20 tk (koos käibemaksuga)
1
€ 1 160,00
€ 1 160,00 tk (ilma käibemaksuta)
€ 1 415,20
€ 1 415,20 tk (koos käibemaksuga)
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
WolfspeedMaximum Drain Source Voltage
1200 V
Maximum Drain Source Resistance
4.6 mΩ
Maximum Gate Threshold Voltage
3.6V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
50 mW
Maximum Gate Source Voltage
-4 V, 19 V
Number of Elements per Chip
1
Width
53mm
Length
80mm
Typical Gate Charge @ Vgs
1330 nC @ 4/15V
Transistor Material
SiC
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Height
15.75mm
Päritoluriik
United States