Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.19mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.2mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 11,66
€ 0,583 tk (pakis 20) (ilma käibemaksuta)
€ 14,46
€ 0,723 tk (pakis 20) (koos käibemaksuga)
Standard
20
€ 11,66
€ 0,583 tk (pakis 20) (ilma käibemaksuta)
€ 14,46
€ 0,723 tk (pakis 20) (koos käibemaksuga)
Standard
20
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Pakend |
---|---|---|
20 - 20 | € 0,583 | € 11,66 |
40 - 80 | € 0,553 | € 11,06 |
100+ | € 0,496 | € 9,92 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.19mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.2mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.