onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3

RS tootekood: 172-3418Bränd: onsemiTootja Part nr.: FCB070N65S3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

78 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.83mm

Päritoluriik

China

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€ 6 400,00

€ 4,00 tk (rullis 1600) (ilma käibemaksuta)

€ 7 936,00

€ 4,96 tk (rullis 1600) (koos käibemaksuga)

onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3

€ 6 400,00

€ 4,00 tk (rullis 1600) (ilma käibemaksuta)

€ 7 936,00

€ 4,96 tk (rullis 1600) (koos käibemaksuga)

onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3

Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

650 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

312 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

9.65mm

Length

10.67mm

Typical Gate Charge @ Vgs

78 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

4.83mm

Päritoluriik

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more