Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Length
2.92mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 5,28
€ 0,211 tk (pakis 25) (ilma käibemaksuta)
€ 6,55
€ 0,262 tk (pakis 25) (koos käibemaksuga)
Standard
25
€ 5,28
€ 0,211 tk (pakis 25) (ilma käibemaksuta)
€ 6,55
€ 0,262 tk (pakis 25) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
25
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Pakend |
---|---|---|
25 - 75 | € 0,211 | € 5,28 |
100 - 225 | € 0,182 | € 4,55 |
250 - 475 | € 0,157 | € 3,92 |
500 - 975 | € 0,139 | € 3,48 |
1000+ | € 0,127 | € 3,18 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
min. 5mA
Maximum Gate Source Voltage
-35 V
Maximum Drain Gate Voltage
35V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
28pF
Source Gate On-Capacitance
28pF
Dimensions
2.92 x 1.3 x 0.93mm
Width
1.3mm
Height
0.93mm
Minimum Operating Temperature
-55 °C
Length
2.92mm
Maximum Operating Temperature
+150 °C
Toote üksikasjad
N-channel JFET, Fairchild Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.