STMicroelectronics MDmesh M2 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK STB13N60M2

RS tootekood: 792-5694PBränd: STMicroelectronicsTootja Part nr.: STB13N60M2
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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€ 61,25

€ 2,45 tk (rullis) (ilma käibemaksuta)

€ 75,95

€ 3,038 tk (rullis) (koos käibemaksuga)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK STB13N60M2
Valige pakendi tüüp

€ 61,25

€ 2,45 tk (rullis) (ilma käibemaksuta)

€ 75,95

€ 3,038 tk (rullis) (koos käibemaksuga)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 11 A, 650 V, 3-Pin D2PAK STB13N60M2

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Valige pakendi tüüp

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kogusÜhikuhindPer Rull
25 - 45€ 2,45€ 12,25
50 - 120€ 2,20€ 11,00
125 - 245€ 2,00€ 10,00
250+€ 1,90€ 9,50

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Width

9.35mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

4.6mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more