STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Forward Diode Voltage
1.1V
Päritoluriik
China
Toote üksikasjad
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 102,75
€ 0,411 tk (rullis) (ilma käibemaksuta)
€ 125,35
€ 0,501 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
250
€ 102,75
€ 0,411 tk (rullis) (ilma käibemaksuta)
€ 125,35
€ 0,501 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
250
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 250 - 450 | € 0,411 | € 20,55 |
| 500+ | € 0,37 | € 18,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
P
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
30 V
Series
STripFET
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.75mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.04mm
Typical Gate Charge @ Vgs
6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Forward Diode Voltage
1.1V
Päritoluriik
China
Toote üksikasjad
P-Channel STripFET™ Power MOSFET, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products