Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Toote üksikasjad
MOSFET Transistors, Toshiba
€ 3,50
€ 3,50 tk (ilma käibemaksuta)
€ 4,27
€ 4,27 tk (koos käibemaksuga)
Standard
1
€ 3,50
€ 3,50 tk (ilma käibemaksuta)
€ 4,27
€ 4,27 tk (koos käibemaksuga)
Standard
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind |
---|---|
1 - 9 | € 3,50 |
10 - 19 | € 3,35 |
20 - 49 | € 3,15 |
50 - 249 | € 2,80 |
250+ | € 2,60 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
214 A
Maximum Drain Source Voltage
80 V
Series
TK
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
255 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.45mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.16mm
Typical Gate Charge @ Vgs
130 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
15.1mm
Toote üksikasjad