Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF

RS tootekood: 812-0616PBränd: VishayTootja Part nr.: IRFR210TRPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2V

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 65,80

€ 0,658 tk (rullis) (ilma käibemaksuta)

€ 80,28

€ 0,803 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
Valige pakendi tüüp

€ 65,80

€ 0,658 tk (rullis) (ilma käibemaksuta)

€ 80,28

€ 0,803 tk (rullis) (koos käibemaksuga)

Vishay N-Channel MOSFET, 2.6 A, 200 V, 3-Pin DPAK IRFR210TRPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Rull
100 - 240€ 0,658€ 6,58
250 - 490€ 0,606€ 6,06
500 - 990€ 0,571€ 5,71
1000+€ 0,475€ 4,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

200 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.38mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

2V

Päritoluriik

Malaysia

Toote üksikasjad

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more