Vishay Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC SI4948BEY-T1-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 52,50
€ 1,05 tk (rullis) (ilma käibemaksuta)
€ 65,10
€ 1,302 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 52,50
€ 1,05 tk (rullis) (ilma käibemaksuta)
€ 65,10
€ 1,302 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 50 - 245 | € 1,05 | € 5,25 |
| 250 - 495 | € 0,865 | € 4,32 |
| 500 - 1245 | € 0,72 | € 3,60 |
| 1250+ | € 0,657 | € 3,28 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
4mm
Transistor Material
Si
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products