Vishay N-Channel MOSFET, 120 A, 100 V, 3-Pin TO-220AB SUP70040E-GE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Päritoluriik
Taiwan, Province Of China
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 19,50
€ 3,90 tk (pakis 5) (ilma käibemaksuta)
€ 23,79
€ 4,758 tk (pakis 5) (koos käibemaksuga)
Standard
5
€ 19,50
€ 3,90 tk (pakis 5) (ilma käibemaksuta)
€ 23,79
€ 4,758 tk (pakis 5) (koos käibemaksuga)
Standard
5
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 5 - 45 | € 3,90 | € 19,50 |
| 50 - 120 | € 2,90 | € 14,50 |
| 125 - 245 | € 2,65 | € 13,25 |
| 250 - 495 | € 2,35 | € 11,75 |
| 500+ | € 2,15 | € 10,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
4.6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.51mm
Typical Gate Charge @ Vgs
76 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
15.49mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Päritoluriik
Taiwan, Province Of China
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products