Diodes Inc Dual N/P-Channel MOSFET, 8.2 A, 30 V, 8-Pin SOIC DMC3026LSD-13

RS tootekood: 921-1029PBränd: DiodesZetexTootja Part nr.: DMC3026LSD-13
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

8.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

13.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 8,72

€ 0,436 tk (rullis) (ilma käibemaksuta)

€ 10,81

€ 0,541 tk (rullis) (koos käibemaksuga)

Diodes Inc Dual N/P-Channel MOSFET, 8.2 A, 30 V, 8-Pin SOIC DMC3026LSD-13
Valige pakendi tüüp

€ 8,72

€ 0,436 tk (rullis) (ilma käibemaksuta)

€ 10,81

€ 0,541 tk (rullis) (koos käibemaksuga)

Diodes Inc Dual N/P-Channel MOSFET, 8.2 A, 30 V, 8-Pin SOIC DMC3026LSD-13
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N, P

Maximum Continuous Drain Current

8.2 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

29 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.95mm

Transistor Material

Si

Number of Elements per Chip

2

Length

4.95mm

Typical Gate Charge @ Vgs

13.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more