Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7

RS tootekood: 921-1048Bränd: DiodesZetexTootja Part nr.: DMN10H220L-7
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 10,50

€ 0,35 tk (pakis 30) (ilma käibemaksuta)

€ 12,81

€ 0,427 tk (pakis 30) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
Valige pakendi tüüp

€ 10,50

€ 0,35 tk (pakis 30) (ilma käibemaksuta)

€ 12,81

€ 0,427 tk (pakis 30) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 1.6 A, 100 V, 3-Pin SOT-23 DMN10H220L-7
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

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kogusÜhikuhindPer Pakend
30 - 120€ 0,35€ 10,50
150 - 420€ 0,308€ 9,24
450 - 870€ 0,298€ 8,94
900 - 2970€ 0,292€ 8,76
3000+€ 0,284€ 8,52

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

100 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

1.4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

3mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Toote üksikasjad

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada