Infineon HEXFET N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF

RS tootekood: 215-2577Bränd: InfineonTootja Part nr.: IRF6668TRPBF
brand-logo
Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Lao andmed ajutiselt ei ole saadaval.

€ 3 624,00

€ 0,755 tk (rullis 4800) (ilma käibemaksuta)

€ 4 421,28

€ 0,921 tk (rullis 4800) (koos käibemaksuga)

Infineon HEXFET N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF

€ 3 624,00

€ 0,755 tk (rullis 4800) (ilma käibemaksuta)

€ 4 421,28

€ 0,921 tk (rullis 4800) (koos käibemaksuga)

Infineon HEXFET N-Channel MOSFET, 55 A, 80 V, 7-Pin DirectFET ISOMETRIC IRF6668TRPBF
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

80 V

Package Type

DirectFET ISOMETRIC

Series

HEXFET

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

0.015 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more