onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G

RS tootekood: 688-9146Bränd: onsemiTootja Part nr.: NTR4501NT1G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 0,88

€ 0,44 tk (pakis 2) (ilma käibemaksuta)

€ 1,07

€ 0,537 tk (pakis 2) (koos käibemaksuga)

onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G
Valige pakendi tüüp

€ 0,88

€ 0,44 tk (pakis 2) (ilma käibemaksuta)

€ 1,07

€ 0,537 tk (pakis 2) (koos käibemaksuga)

onsemi N-Channel MOSFET, 3.2 A, 20 V, 3-Pin SOT-23 NTR4501NT1G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

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kogusÜhikuhindPer Pakend
2 - 58€ 0,44€ 0,88
60 - 118€ 0,414€ 0,83
120 - 198€ 0,354€ 0,71
200 - 498€ 0,334€ 0,67
500+€ 0,32€ 0,64

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3.2 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Typical Gate Charge @ Vgs

2.4 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada