Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Toote üksikasjad
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 37,50
€ 3,75 tk (rullis) (ilma käibemaksuta)
€ 45,75
€ 4,57 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
€ 37,50
€ 3,75 tk (rullis) (ilma käibemaksuta)
€ 45,75
€ 4,57 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind |
---|---|
10 - 99 | € 3,75 |
100 - 499 | € 3,35 |
500 - 999 | € 2,95 |
1000+ | € 2,55 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Toote üksikasjad