STMicroelectronics STripFET N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD16NF06LT4

RS tootekood: 168-7464Bränd: STMicroelectronicsTootja Part nr.: STD16NF06LT4
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-18 V, +18 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

7.5 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.4mm

Toote üksikasjad

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Lao andmed ajutiselt ei ole saadaval.

€ 1 230,00

€ 0,492 tk (rullis 2500) (ilma käibemaksuta)

€ 1 500,60

€ 0,60 tk (rullis 2500) (koos käibemaksuga)

STMicroelectronics STripFET N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD16NF06LT4

€ 1 230,00

€ 0,492 tk (rullis 2500) (ilma käibemaksuta)

€ 1 500,60

€ 0,60 tk (rullis 2500) (koos käibemaksuga)

STMicroelectronics STripFET N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD16NF06LT4
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

60 V

Series

STripFET

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

85 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-18 V, +18 V

Number of Elements per Chip

1

Width

6.2mm

Length

6.6mm

Typical Gate Charge @ Vgs

7.5 nC @ 5 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

2.4mm

Toote üksikasjad

N-Channel STripFET™, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more