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Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

RS tootekood: 171-2415Bränd: ToshibaTootja Part nr.: TJ8S06M3L
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Päritoluriik

Japan

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Lao andmed ajutiselt ei ole saadaval.

€ 1 262,00

€ 0,631 tk (rullis 2000) (ilma käibemaksuta)

€ 1 539,64

€ 0,77 tk (rullis 2000) (koos käibemaksuga)

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L

€ 1 262,00

€ 0,631 tk (rullis 2000) (ilma käibemaksuta)

€ 1 539,64

€ 0,77 tk (rullis 2000) (koos käibemaksuga)

Toshiba P-Channel MOSFET, 8 A, 60 V, 3-Pin DPAK TJ8S06M3L
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Toshiba

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

130 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +10 V

Number of Elements per Chip

1

Width

7mm

Length

6.5mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Maximum Operating Temperature

+175 °C

Forward Diode Voltage

1.2V

Height

2.3mm

Automotive Standard

AEC-Q101

Päritoluriik

Japan

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more