Vishay Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 SI1922EDH-T1-GE3

RS tootekood: 812-3091Bränd: VishayTootja Part nr.: SI1922EDH-T1-GE3
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

263 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Length

2.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.6 nC @ 8 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Toote üksikasjad

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 16,55

€ 0,331 tk (pakis 50) (ilma käibemaksuta)

€ 20,52

€ 0,41 tk (pakis 50) (koos käibemaksuga)

Vishay Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 SI1922EDH-T1-GE3
Valige pakendi tüüp

€ 16,55

€ 0,331 tk (pakis 50) (ilma käibemaksuta)

€ 20,52

€ 0,41 tk (pakis 50) (koos käibemaksuga)

Vishay Dual N-Channel MOSFET, 1.3 A, 20 V, 6-Pin SOT-363 SI1922EDH-T1-GE3
Lao andmed ajutiselt ei ole saadaval.
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Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

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  • Download 3D Models, Schematics and Footprints from more than a million products
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Teid võib huvitada

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

20 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

263 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.25 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

2

Length

2.2mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.6 nC @ 8 V

Width

1.35mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Toote üksikasjad

Dual N-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Teid võib huvitada