Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Length
2.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad
Dual N-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 16,55
€ 0,331 tk (pakis 50) (ilma käibemaksuta)
€ 20,52
€ 0,41 tk (pakis 50) (koos käibemaksuga)
Standard
50
€ 16,55
€ 0,331 tk (pakis 50) (ilma käibemaksuta)
€ 20,52
€ 0,41 tk (pakis 50) (koos käibemaksuga)
Standard
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
263 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Length
2.2mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.6 nC @ 8 V
Width
1.35mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Toote üksikasjad