Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 62,50
€ 1,25 tk (rullis) (ilma käibemaksuta)
€ 77,50
€ 1,55 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
€ 62,50
€ 1,25 tk (rullis) (ilma käibemaksuta)
€ 77,50
€ 1,55 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
50
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
50 - 245 | € 1,25 | € 6,25 |
250 - 495 | € 0,997 | € 4,98 |
500 - 1245 | € 0,83 | € 4,15 |
1250+ | € 0,758 | € 3,79 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.1 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
2
Length
5mm
Typical Gate Charge @ Vgs
14.5 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad