Vishay Siliconix TrenchFET N-Channel MOSFET, 60 A, 60 V, 8-Pin PowerPAK SO-8 SiR188DP-T1-RE3
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 1 860,00
€ 0,62 tk (rullis 3000) (ilma käibemaksuta)
€ 2 269,20
€ 0,756 tk (rullis 3000) (koos käibemaksuga)
3000
€ 1 860,00
€ 0,62 tk (rullis 3000) (ilma käibemaksuta)
€ 2 269,20
€ 0,756 tk (rullis 3000) (koos käibemaksuga)
3000
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Vishay SiliconixChannel Type
N
Maximum Continuous Drain Current
60 A
Maximum Drain Source Voltage
60 V
Package Type
PowerPAK SO-8
Series
TrenchFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
3.6V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
5mm
Length
5.99mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.07mm
Päritoluriik
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products