Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.7 nC @ 4.5 V, 9.1 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Width
3.99mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm
€ 4,71
€ 0,471 tk (pakis 10) (ilma käibemaksuta)
€ 5,84
€ 0,584 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 4,71
€ 0,471 tk (pakis 10) (ilma käibemaksuta)
€ 5,84
€ 0,584 tk (pakis 10) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Standard
10
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Pakend |
---|---|---|
10 - 90 | € 0,471 | € 4,71 |
100 - 190 | € 0,323 | € 3,23 |
200+ | € 0,307 | € 3,07 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
59 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.3V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
4.7 nC @ 4.5 V, 9.1 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
4.98mm
Width
3.99mm
Transistor Material
Si
Series
HEXFET
Minimum Operating Temperature
-55 °C
Height
1.57mm