Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0
€ 71,10
€ 0,711 tk (rullis) (ilma käibemaksuta)
€ 86,74
€ 0,867 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
€ 71,10
€ 0,711 tk (rullis) (ilma käibemaksuta)
€ 86,74
€ 0,867 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
100
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
kogus | Ühikuhind | Per Rull |
---|---|---|
100 - 240 | € 0,711 | € 7,11 |
250 - 490 | € 0,682 | € 6,82 |
500 - 990 | € 0,652 | € 6,52 |
1000+ | € 0,607 | € 6,07 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Series
Si4435DYPbF
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
35 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Width
4mm
Number of Elements per Chip
1
Length
5mm
Typical Gate Charge @ Vgs
40 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Typical Power Gain
0