Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF

RS tootekood: 171-1913PBränd: InfineonTootja Part nr.: SI4435DYTRPBF
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

Si4435DYPbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Typical Power Gain

0

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Lao andmed ajutiselt ei ole saadaval.

€ 71,10

€ 0,711 tk (rullis) (ilma käibemaksuta)

€ 86,74

€ 0,867 tk (rullis) (koos käibemaksuga)

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Valige pakendi tüüp

€ 71,10

€ 0,711 tk (rullis) (ilma käibemaksuta)

€ 86,74

€ 0,867 tk (rullis) (koos käibemaksuga)

Infineon P-Channel MOSFET, 8 A, 30 V, 8-Pin SO-8 SI4435DYTRPBF
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

kogusÜhikuhindPer Rull
100 - 240€ 0,711€ 7,11
250 - 490€ 0,682€ 6,82
500 - 990€ 0,652€ 6,52
1000+€ 0,607€ 6,07

Ideate. Create. Collaborate

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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

30 V

Series

Si4435DYPbF

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

35 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

4mm

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

40 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Typical Power Gain

0

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more