IXYS IXGT30N120B3D1 IGBT, 50 A 1200 V, 3-Pin TO-268, Surface Mount
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-268
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Length
16.05mm
Width
14mm
Height
5.1mm
Dimensions
16.05 x 14 x 5.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Toote üksikasjad
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 20,40
€ 20,40 tk (ilma käibemaksuta)
€ 24,89
€ 24,89 tk (koos käibemaksuga)
1
€ 20,40
€ 20,40 tk (ilma käibemaksuta)
€ 24,89
€ 24,89 tk (koos käibemaksuga)
1
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-268
Mounting Type
Surface Mount
Pin Count
3
Transistor Configuration
Single
Length
16.05mm
Width
14mm
Height
5.1mm
Dimensions
16.05 x 14 x 5.1mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Toote üksikasjad
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products