STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150

RS tootekood: 920-6566Bränd: STMicroelectronicsTootja Part nr.: STW4N150
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.15mm

Toote üksikasjad

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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Lao andmed ajutiselt ei ole saadaval.

€ 153,00

€ 5,10 tk (torus 30) (ilma käibemaksuta)

€ 189,72

€ 6,324 tk (torus 30) (koos käibemaksuga)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150

€ 153,00

€ 5,10 tk (torus 30) (ilma käibemaksuta)

€ 189,72

€ 6,324 tk (torus 30) (koos käibemaksuga)

STMicroelectronics MDmesh N-Channel MOSFET, 4 A, 1500 V, 3-Pin TO-247 STW4N150
Lao andmed ajutiselt ei ole saadaval.

Lao andmed ajutiselt ei ole saadaval.

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Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

1500 V

Series

MDmesh

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

7 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.75mm

Typical Gate Charge @ Vgs

30 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.15mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

20.15mm

Toote üksikasjad

N-Channel MDmesh™, 800V/1500V, STMicroelectronics

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more