Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
€ 6.58
€ 0.263 Each (In a Pack of 25) (Exc. Vat)
€ 8.16
€ 0.326 Each (In a Pack of 25) (inc. VAT)
Standard
25
€ 6.58
€ 0.263 Each (In a Pack of 25) (Exc. Vat)
€ 8.16
€ 0.326 Each (In a Pack of 25) (inc. VAT)
Stock information temporarily unavailable.
Standard
25
Stock information temporarily unavailable.
Quantity | Unit price | Per Pack |
---|---|---|
25 - 225 | € 0.263 | € 6.58 |
250 - 475 | € 0.221 | € 5.52 |
500+ | € 0.214 | € 5.35 |
Technical Document
Specifications
Brand
Taiwan SemiconductorChannel Type
P
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
10 nC @ 10 V
Width
1.7mm
Height
1.2mm
Minimum Operating Temperature
-55 °C
Product details