Toshiba TK N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
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€ 50.00
€ 1.00 Each (In a Tube of 50) (Exc. Vat)
€ 61.00
€ 1.22 Each (In a Tube of 50) (inc. VAT)
50
€ 50.00
€ 1.00 Each (In a Tube of 50) (Exc. Vat)
€ 61.00
€ 1.22 Each (In a Tube of 50) (inc. VAT)
50
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| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 1.00 | € 50.00 |
| 250 - 450 | € 0.86 | € 43.00 |
| 500 - 1200 | € 0.839 | € 41.95 |
| 1250+ | € 0.816 | € 40.80 |
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220
Series
TK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
8.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
126 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Length
10.16mm
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
49 nC @ 10 V
Width
4.45mm
Transistor Material
Si
Height
15.1mm
Country of Origin
China
Product details
MOSFET Transistors, Toshiba
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products