Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 83,75
€ 3,35 tk (torus) (ilma käibemaksuta)
€ 103,85
€ 4,154 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
25
€ 83,75
€ 3,35 tk (torus) (ilma käibemaksuta)
€ 103,85
€ 4,154 tk (torus) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Tuub)
25
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Tuub |
---|---|---|
25 - 45 | € 3,35 | € 16,75 |
50 - 120 | € 3,20 | € 16,00 |
125 - 245 | € 2,85 | € 14,25 |
250+ | € 2,70 | € 13,50 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
250 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Width
4.7mm
Typical Gate Charge @ Vgs
81 nC @ 10 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Päritoluriik
China
Toote üksikasjad