Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
6.22mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 29,52
€ 0,738 tk (torus) (ilma käibemaksuta)
€ 36,60
€ 0,915 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
40
€ 29,52
€ 0,738 tk (torus) (ilma käibemaksuta)
€ 36,60
€ 0,915 tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
40
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
4.3 A
Maximum Drain Source Voltage
100 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Width
2.38mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.73mm
Height
6.22mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad