Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13

RS tootekood: 921-1287PBränd: DiodesZetexTootja Part nr.: DMN4026SK3-13
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.2mm

Typical Gate Charge @ Vgs

21.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Lao andmed ajutiselt ei ole saadaval.

€ 94,20

€ 0,471 tk (rullis) (ilma käibemaksuta)

€ 114,92

€ 0,575 tk (rullis) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13
Valige pakendi tüüp

€ 94,20

€ 0,471 tk (rullis) (ilma käibemaksuta)

€ 114,92

€ 0,575 tk (rullis) (koos käibemaksuga)

Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

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kogusÜhikuhindPer Rull
200 - 480€ 0,471€ 9,42
500 - 1980€ 0,416€ 8,32
2000+€ 0,36€ 7,20

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

28 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

32 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.2mm

Typical Gate Charge @ Vgs

21.3 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1V

Toote üksikasjad

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more