Diodes Inc N-Channel MOSFET, 28 A, 40 V, 3-Pin DPAK DMN4026SK3-13
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Toote üksikasjad
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 94,20
€ 0,471 tk (rullis) (ilma käibemaksuta)
€ 114,92
€ 0,575 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
€ 94,20
€ 0,471 tk (rullis) (ilma käibemaksuta)
€ 114,92
€ 0,575 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
200
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Rull |
|---|---|---|
| 200 - 480 | € 0,471 | € 9,42 |
| 500 - 1980 | € 0,416 | € 8,32 |
| 2000+ | € 0,36 | € 7,20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
28 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
32 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.2mm
Typical Gate Charge @ Vgs
21.3 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Toote üksikasjad
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products