N-channel MOSFET,IRF630 9A 200V 50pcs
Tehnilised dokumendid
Spetsifikatsioonid:
Channel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
10.4mm
Height
9.15mm
Width
4.6mm
Toote üksikasjad
Molex BEAU Series Power Connectors
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Palun kontrollige hiljem uuesti.
P.O.A.
1
P.O.A.
1
Tehnilised dokumendid
Spetsifikatsioonid:
Channel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
200 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
74 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
10.4mm
Height
9.15mm
Width
4.6mm
Toote üksikasjad
Molex BEAU Series Power Connectors