Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
360 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.03 x 20.95mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Palun kontrollige hiljem uuesti.
€ 9,60
tk (torus 30) (ilma käibemaksuta)
€ 11,712
tk (torus 30) (koos käibemaksuga)
30
€ 9,60
tk (torus 30) (ilma käibemaksuta)
€ 11,712
tk (torus 30) (koos käibemaksuga)
30
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
30 - 120 | € 9,60 | € 288,00 |
150 - 270 | € 8,60 | € 258,00 |
300+ | € 7,80 | € 234,00 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Fuji ElectricMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
360 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
15.9 x 5.03 x 20.95mm
Minimum Operating Temperature
-40 °C
Maximum Operating Temperature
+175 °C
Päritoluriik
Japan
Toote üksikasjad
IGBT Discretes, Fuji Electric
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.