Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
IPD068N10N3 G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
7.47mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,988
tk (pakis 10) (ilma käibemaksuta)
€ 1,205
tk (pakis 10) (koos käibemaksuga)
10
€ 0,988
tk (pakis 10) (ilma käibemaksuta)
€ 1,205
tk (pakis 10) (koos käibemaksuga)
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
90 A
Maximum Drain Source Voltage
100 V
Series
IPD068N10N3 G
Package Type
TO-252
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
150 W
Transistor Configuration
Single
Maximum Gate Source Voltage
20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Width
7.47mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
2.41mm