Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
40 V
Series
StrongIRFET
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
366 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
15.87mm
Typical Gate Charge @ Vgs
460 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
Toote üksikasjad
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,55
€ 3,55 tk (ilma käibemaksuta)
€ 4,33
€ 4,33 tk (koos käibemaksuga)
Standard
1
€ 3,55
€ 3,55 tk (ilma käibemaksuta)
€ 4,33
€ 4,33 tk (koos käibemaksuga)
Standard
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 9 | € 3,55 |
10 - 24 | € 3,35 |
25 - 49 | € 3,30 |
50 - 99 | € 3,10 |
100+ | € 2,85 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
195 A
Maximum Drain Source Voltage
40 V
Series
StrongIRFET
Package Type
TO-247AC
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
1.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
366 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
15.87mm
Typical Gate Charge @ Vgs
460 nC @ 10 V
Width
5.31mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
20.7mm
Toote üksikasjad
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.