N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 Infineon SPW35N60C3FKSA1
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Width
5.21mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
21.1mm
Toote üksikasjad
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 11,70
tk (torus) (ilma käibemaksuta)
€ 14,27
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
1
€ 11,70
tk (torus) (ilma käibemaksuta)
€ 14,27
tk (torus) (koos käibemaksuga)
Tootmispakett (Tuub)
1
Osta lahtiselt
| kogus | Ühikuhind |
|---|---|
| 1 - 4 | € 11,70 |
| 5 - 9 | € 11,10 |
| 10 - 24 | € 10,60 |
| 25 - 49 | € 10,20 |
| 50+ | € 9,50 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C3
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
313 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
150 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
16.13mm
Width
5.21mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
21.1mm
Toote üksikasjad
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products