Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Toote üksikasjad
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 333,00
€ 11,10 tk (torus 30) (ilma käibemaksuta)
€ 406,26
€ 13,542 tk (torus 30) (koos käibemaksuga)
30
€ 333,00
€ 11,10 tk (torus 30) (ilma käibemaksuta)
€ 406,26
€ 13,542 tk (torus 30) (koos käibemaksuga)
30
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
IXYSMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Toote üksikasjad
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.