Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Päritoluriik
Korea, Republic Of
Toote üksikasjad
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.
MOSFET Transistors, MagnaChip
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 0,729
tk (torus 10) (ilma käibemaksuta)
€ 0,889
tk (torus 10) (koos käibemaksuga)
10
€ 0,729
tk (torus 10) (ilma käibemaksuta)
€ 0,889
tk (torus 10) (koos käibemaksuga)
10
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
10 - 40 | € 0,729 | € 7,29 |
50 - 90 | € 0,506 | € 5,06 |
100 - 290 | € 0,493 | € 4,93 |
300 - 690 | € 0,48 | € 4,80 |
700+ | € 0,471 | € 4,71 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MagnaChipChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
500 V
Package Type
TO-220F
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
38 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.71mm
Typical Gate Charge @ Vgs
15.7 nC @ 10 V
Width
4.93mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
16.13mm
Päritoluriik
Korea, Republic Of
Toote üksikasjad
High Voltage (HV) MOSFET
High Voltage, N-Channel MOSFET, with low on-state resistance and high switching performance.