Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.2mm
Width
6.73mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,60
tk (rullis 2000) (ilma käibemaksuta)
€ 1,952
tk (rullis 2000) (koos käibemaksuga)
2000
€ 1,60
tk (rullis 2000) (ilma käibemaksuta)
€ 1,952
tk (rullis 2000) (koos käibemaksuga)
2000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
MicrochipChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
6.2mm
Width
6.73mm
Number of Elements per Chip
1
Height
2.39mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.