Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
P.O.A.
Tootmispakett (Tuub)
10
P.O.A.
Tootmispakett (Tuub)
10
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
ON SemiconductorTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
4
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
10.28 x 4.82 x 15.75mm