Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155

RS tootekood: 146-4096Bränd: ON SemiconductorTootja Part nr.: FCH040N65S3-F155
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Kuva kõik kategoorias MOSFETs

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

SuperFET III

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Maximum Operating Temperature

+150 °C

Length

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Width

5.3mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Height

21.08mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 10,60

tk (ilma käibemaksuta)

€ 12,93

tk (koos käibemaksuga)

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155

€ 10,60

tk (ilma käibemaksuta)

€ 12,93

tk (koos käibemaksuga)

Dual N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 onsemi FCH040N65S3-F155
Lao andmed ajutiselt ei ole saadaval.

Osta lahtiselt

kogusÜhikuhind
1 - 24€ 10,60
25 - 49€ 9,70
50 - 224€ 9,00
225+€ 8,30

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247

Series

SuperFET III

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

417 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V ac/dc

Maximum Operating Temperature

+150 °C

Length

16.26mm

Typical Gate Charge @ Vgs

136 @ 10 V nC

Width

5.3mm

Number of Elements per Chip

2

Forward Diode Voltage

1.2V

Height

21.08mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more