Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Päritoluriik
Philippines
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,25
tk (rullis 2500) (ilma käibemaksuta)
€ 1,525
tk (rullis 2500) (koos käibemaksuga)
2500
€ 1,25
tk (rullis 2500) (ilma käibemaksuta)
€ 1,525
tk (rullis 2500) (koos käibemaksuga)
2500
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
4.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
227 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±16 V
Width
6.22mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Typical Gate Charge @ Vgs
100 nC @ 10 V
Height
2.39mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Päritoluriik
Philippines