onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G

RS tootekood: 780-4723Bränd: onsemiTootja Part nr.: NTMS4177PR2G
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Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Lao andmed ajutiselt ei ole saadaval.

€ 4,91

€ 0,491 tk (pakis 10) (ilma käibemaksuta)

€ 6,09

€ 0,609 tk (pakis 10) (koos käibemaksuga)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Valige pakendi tüüp

€ 4,91

€ 0,491 tk (pakis 10) (ilma käibemaksuta)

€ 6,09

€ 0,609 tk (pakis 10) (koos käibemaksuga)

onsemi P-Channel MOSFET, 11.4 A, 30 V, 8-Pin SOIC NTMS4177PR2G
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Lao andmed ajutiselt ei ole saadaval.

Palun kontrollige hiljem uuesti.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

19 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

29 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Toote üksikasjad

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more