Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
224 A
Maximum Drain Source Voltage
60 V
Package Type
DFN8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Length
5.9mm
Typical Gate Charge @ Vgs
91 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 3,90
tk (rullis 3000) (ilma käibemaksuta)
€ 4,758
tk (rullis 3000) (koos käibemaksuga)
3000
€ 3,90
tk (rullis 3000) (ilma käibemaksuta)
€ 4,758
tk (rullis 3000) (koos käibemaksuga)
3000
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
224 A
Maximum Drain Source Voltage
60 V
Package Type
DFN8 5 x 6
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
2.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
166 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5mm
Number of Elements per Chip
1
Length
5.9mm
Typical Gate Charge @ Vgs
91 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V