Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Toote üksikasjad
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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Palun kontrollige hiljem uuesti.
€ 0,212
tk (rullis) (ilma käibemaksuta)
€ 0,259
tk (rullis) (koos käibemaksuga)
50
€ 0,212
tk (rullis) (ilma käibemaksuta)
€ 0,259
tk (rullis) (koos käibemaksuga)
50
Osta lahtiselt
kogus | Ühikuhind | Per Rull |
---|---|---|
50 - 200 | € 0,212 | € 10,60 |
250 - 950 | € 0,102 | € 5,10 |
1000 - 2450 | € 0,084 | € 4,20 |
2500+ | € 0,082 | € 4,10 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SOT-883
Pin Count
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Dimensions
1.08 x 0.68 x 0.41mm
Length
1.08mm
Height
0.41mm
Maximum Power Dissipation
100 mW
Maximum Operating Temperature
+150 °C
Width
0.68mm
Toote üksikasjad
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.