N-Channel MOSFET, 70 A, 30 V, 3-Pin D2PAK STMicroelectronics STB70NF3LLT4
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Series
STripFET F3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
10.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.75mm
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Height
4.6mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 472,00
€ 0,472 tk (rullis 1000) (ilma käibemaksuta)
€ 575,84
€ 0,576 tk (rullis 1000) (koos käibemaksuga)
1000
€ 472,00
€ 0,472 tk (rullis 1000) (ilma käibemaksuta)
€ 575,84
€ 0,576 tk (rullis 1000) (koos käibemaksuga)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
30 V
Series
STripFET F3
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
12 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
100 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +16 V
Width
10.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.75mm
Typical Gate Charge @ Vgs
24 nC @ 4.5 V
Height
4.6mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel STripFET™ F3, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products