Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Series
MDmesh
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 2,65
tk (ilma käibemaksuta)
€ 3,23
tk (koos käibemaksuga)
1
€ 2,65
tk (ilma käibemaksuta)
€ 3,23
tk (koos käibemaksuga)
1
Osta lahtiselt
kogus | Ühikuhind |
---|---|
1 - 4 | € 2,65 |
5 - 24 | € 2,30 |
25 - 49 | € 2,05 |
50 - 99 | € 1,85 |
100+ | € 1,70 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
650 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
360 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
90 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
30 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.6mm
Width
6.2mm
Transistor Material
Si
Height
2.4mm
Series
MDmesh