Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Toote üksikasjad
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
€ 1,15
tk (torus) (ilma käibemaksuta)
€ 1,403
tk (torus) (koos käibemaksuga)
5
€ 1,15
tk (torus) (ilma käibemaksuta)
€ 1,403
tk (torus) (koos käibemaksuga)
5
Osta lahtiselt
kogus | Ühikuhind | Per Tuub |
---|---|---|
5 - 20 | € 1,15 | € 5,75 |
25 - 45 | € 0,928 | € 4,64 |
50 - 95 | € 0,821 | € 4,10 |
100 - 245 | € 0,71 | € 3,55 |
250+ | € 0,681 | € 3,40 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.4 x 4.6 x 9.15mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Toote üksikasjad
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.