STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 400 mA, 600 V, 3-Pin SOT-223 STN1HNK60
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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€ 8,64
€ 0,864 tk (pakis 10) (ilma käibemaksuta)
€ 10,71
€ 1,071 tk (pakis 10) (koos käibemaksuga)
Standard
10
€ 8,64
€ 0,864 tk (pakis 10) (ilma käibemaksuta)
€ 10,71
€ 1,071 tk (pakis 10) (koos käibemaksuga)
Standard
10
Lao andmed ajutiselt ei ole saadaval.
Palun kontrollige hiljem uuesti.
| kogus | Ühikuhind | Per Pakend |
|---|---|---|
| 10 - 20 | € 0,864 | € 8,64 |
| 30 - 90 | € 0,819 | € 8,19 |
| 100 - 490 | € 0,617 | € 6,17 |
| 500 - 990 | € 0,523 | € 5,23 |
| 1000+ | € 0,419 | € 4,19 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
400 mA
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
8.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.25V
Maximum Power Dissipation
3.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
3.5mm
Transistor Material
Si
Typical Gate Charge @ Vgs
7 nC @ 10 V
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+150 °C
Height
1.8mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products