Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad
N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
€ 34,75
€ 0,139 tk (rullis) (ilma käibemaksuta)
€ 43,09
€ 0,172 tk (rullis) (koos käibemaksuga)
Tootmispakett (Rull)
250
€ 34,75
€ 0,139 tk (rullis) (ilma käibemaksuta)
€ 43,09
€ 0,172 tk (rullis) (koos käibemaksuga)
Lao andmed ajutiselt ei ole saadaval.
Tootmispakett (Rull)
250
Lao andmed ajutiselt ei ole saadaval.
kogus | Ühikuhind | Per Rull |
---|---|---|
250 - 450 | € 0,139 | € 6,95 |
500 - 950 | € 0,13 | € 6,50 |
1000 - 2450 | € 0,123 | € 6,15 |
2500+ | € 0,116 | € 5,80 |
Tehnilised dokumendid
Spetsifikatsioonid:
Brand
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
65 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.69 nC @ 4.5 V
Width
1.4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.05mm
Maximum Operating Temperature
+150 °C
Height
0.95mm
Minimum Operating Temperature
-55 °C
Toote üksikasjad