N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A

RS tootekood: 827-4883Bränd: Texas InstrumentsTootja Part nr.: CSD18504Q5A
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Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

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€ 0,512

tk (pakis 5) (ilma käibemaksuta)

€ 0,625

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
Valige pakendi tüüp

€ 0,512

tk (pakis 5) (ilma käibemaksuta)

€ 0,625

tk (pakis 5) (koos käibemaksuga)

N-Channel MOSFET, 75 A, 40 V, 8-Pin VSONP Texas Instruments CSD18504Q5A
Lao andmed ajutiselt ei ole saadaval.
Valige pakendi tüüp

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Tehnilised dokumendid

Spetsifikatsioonid:

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

40 V

Series

NexFET

Package Type

VSONP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

5.8mm

Typical Gate Charge @ Vgs

7.7 nC @ 4.5 V

Width

5mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.1mm

Toote üksikasjad

N-Channel NexFET™ Power MOSFET, Texas Instruments

MOSFET Transistors, Texas Instruments

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more